參數(shù)資料
型號： IXTQ69N30P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHT Power MOSFET
中文描述： 69 A, 300 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 107K
代理商： IXTQ69N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 69N30P
IXTT 69N30P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
30
48
S
C
iss
C
oss
C
rss
4960
760
190
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
25
25
75
27
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 4
(External)
Q
g(on)
Q
gs
Q
gd
156
32
79
180 nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
nC
nC
R
thJC
R
thCK
0.25K/W
(TO-247, TO-3P)
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
69
A
I
SM
Repetitive
200
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
T
JM
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
250
ns
Q
RM
3.0
μ
C
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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IXTQ72N20T 功能描述:MOSFET 72 Amps 200V 33 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTQ72N30T 功能描述:MOSFET 72 Amps 300V 52 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTQ74N15T 功能描述:MOSFET 74 Amps 150V 27 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTQ74N20P 功能描述:MOSFET 74 Amps 200V 0.034 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTQ75N10P 功能描述:MOSFET 75 Amps 100V 0.025 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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