參數(shù)資料
型號： IXTN61N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Current Power MOSFET
中文描述： 61 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 53K
代理商： IXTN61N50
1997 IXYS All rights reserved
S
G
S
D
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
High Current
Power MOSFET
N-Channel Enhancement Mode
V
DSS
500 V
500 V
I
D25
58 A 85
m
61 A 75 m
R
DS(on)
IXTN 58N50
IXTN 61N50
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1.0 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25°C
IXTN 58N50
IXTN 61N50
IXTN 58N50
IXTN 61N50
58
61
232
244
A
A
A
A
I
DM
T
= 25°C
Pulse width limited by T
JM
P
D
T
C
= 25°C
625
W
T
J
T
JM
T
stg
-40 ... +150
°C
°C
°C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS
t = 1 minute
t = 1s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ.
500
Max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
V
V
GS(th)
V
DS
= V
GS
,
I
D
= 12 mA
1.7
4.0
V
I
GSS
V
GS
=
±
20 V DC, V
DS
= 0
±
200
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
500
μA
mA
2
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
58N50
61N50
85
75
m
m
Pulse test, t
≤
300 μs, duty cycle
≤
2 %
Preliminary Data
Features
International standard package
Isolation voltage 3000V (RMS)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<100 pF)
- reduced RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Aluminium Nitride Isolation
- increased current ratings
Applications
DC choppers
AC motor speed controls
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched mode and resonant mode
power supplies
Advantages
Easy to mount
Space savings
High power density
miniBLOC, SOT-227 B
E153432
95501B(4/97)
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