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參數(shù)資料
| 型號(hào)： | IXTK90N15 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 90A I(D) | TO-264AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 90A型（?。﹟對(duì)264AA |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | IXTK90N15 |
2002 IXYS All rights reserved
Advance Technical Information
Symbol
Test Conditions
Characteristic Values
Min. Typ.
(T
J
= 25°C unless otherwise specified)
Max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
4.0
V
I
GSS
V
GS
= ±20 V DC, V
DS
= 0
±100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25°C
T
J
= 125°C
50
μ
A
mA
2
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300 ms, duty cycle d
≤
2%
16 m
Features
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Applications
Motor controls
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
98876 (01/02)
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
Symbol
Test conditions
Maximum ratings
V
DSS
V
DGR
T
J
T
J
= 25°C to 150°C
= 25°C to 150°C; R
GS
= 1.0 M
150
V
150
V
V
GS
V
GSM
Continuous
±20
V
Transient
±30
V
I
D25
I
D(RMS)
I
DM
I
AR
T
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
= 25
°
C MOSFET chip capability
90
75
A
A
A
A
360
90
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
= 25
°
C
45
1.5
mJ
J
I
S
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
390
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
0.7/6
Nm/lb.in.
TO-264
10
g
TO-264 AA (IXTK)
S
G
D
D (TAB)
G = Gate
S = Source
D
Tab = Drain
= Drain
IXTK 90N15
V
DSS
I
D25
R
DS(on)
=
=
=
150 V
90 A
16 m
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| IXTL10P20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 |
| IXTL10P50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-254 |
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