參數(shù)資料
型號： IXTK128N15
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Current Mega MOS FET
中文描述： 128 A, 150 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 89K
代理商： IXTK128N15
2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
150
150
V
V
±
20
±
30
V
V
T
= 25
°
C MOSFET chip capability
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
128
75
512
90
A
A
A
A
60
2.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
540
W
°
C
°
C
°
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
0.7/6 Nm/lb.in.
TO-264
10
g
TO-264 AA (IXTK)
G = Gate
S = Source
D = Drain
TAB = Drain
DS98952(03/03)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
=
1
mA
Test Conditions
Characteristic Values
Min. Typ.
Max.
150
V
V
GS(th)
V
DS
= V
GS
, I
D
=
250 μ
A
2.0
4.0
V
I
GSS
V
GS
=
±
20 V
DC, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
mA
2
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
15
m
High Current
Mega MOS
TM
FET
IXTK 128N15
V
DSS
I
D25
R
DS(on)
= 150 V
= 128 A
= 15
m
Advance Technical Information
N-Channel Enhancement Mode
Features
z
International standard package
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Fast switching times
Applications
z
Motor controls
z
DC choppers
z
Switched-mode power supplies
Advantages
z
Easy to mount with one screw
(isolated mounting screw hole)
z
Space savings
z
High power density
S
G
D
(TAB)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTK140N20P 功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK140N30P 功能描述:MOSFET Polar Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK150N15P 功能描述:MOSFET 150 Amps 150V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK160N20 功能描述:MOSFET 160 Amps 200V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTK170N10P 功能描述:MOSFET 170 Amps 100V 0.009 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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