參數(shù)資料
型號(hào)： IXTH7P50
廠商： IXYS CORP
元件分類： JFETs
英文描述： 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Number of I/O Pins:32; ADC Channels:8; Number of Timers 8/12/16/32 Bits:0 / 0 / 2 / 1; Number of PWM Channels:1; Clock Speed:200MHz; Interfaces:AC97, I2S, SPI, UART, USB
中文描述： 7 A, 500 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 75K
代理商： IXTH7P50
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
-500
V
-500
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
7P50
8P50
-7
-8
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
J
7P50
8P50
-28
-32
A
A
I
AR
T
C
= 25
°
C
7P50
8P50
-7
-8
A
A
E
AR
P
D
T
J
T
JM
T
stg
T
L
T
C
= 25
°
C
T
C
= 25
°
C
30
mJ
180
W
-55 ... +150
°
C
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
6
g
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
94534E (6/01)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= -250
μ
A
BV
DSS
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS(th)
Temperature Coefficient
-500
V
0.054
%/K
V
GS(th)
-3.0
-5.0
V
-0.122
%/K
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
-200
μ
A
mA
-1
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
7P50
8P50
1.5
1.2
0.6
R
DS(on)
Temperature Coefficient
%/K
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25
R
DS(on)
IXTH 7P50
IXTH 8P50
-500V -7 A 1.5
-500V -8 A 1.2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH80N20L 功能描述:MOSFET Standard Linear Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH86N20T 功能描述:MOSFET 86 Amps 200V 29 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH88N15 功能描述:MOSFET 88 Amps 150V 0.022 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH88N30P 功能描述:MOSFET 88 Amps 100 V 0.04 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH8P45 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-218VAR
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