參數(shù)資料
型號： IXTA2N80
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode High Voltage MOSFET(最大漏源擊穿電壓800V,導通電阻6.2Ω的N溝道增強型高電壓MOSFET)
中文描述： 2 A, 800 V, 6.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 46K
代理商： IXTA2N80
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
2
8
A
A
I
AR
E
AR
E
AS
dv/dt
2
A
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 18
T
C
= 25
°
C
6
mJ
mJ
200
5
V/ns
P
D
T
J
T
JM
T
stg
M
d
Weight
54
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
4
g
Maximum lead temperature for soldering
300
°
C
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
800
2.5
V
V
5.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
500
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
6.2
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
Space savings
High power density
98541A 03/24/00
GDS
TO-220AB (IXTP)
G
S
TO-263 AA (IXTA)
D (TAB)
V
DSS
I
D25
R
DS(on)
= 6.2
= 800 V
= 2 A
Advanced Technical Information
IXTA 2N80
IXTP 2N80
IXYS reserves the right to change limits, test conditions, and dimensions.
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