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參數資料
| 型號： | IXST15N120BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | S Series - Improved SCSOA Capability |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268AA, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | IXST15N120BD1 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load
30
15
60
A
A
A
I
= 40
@ 0.8 V
CES
A
t
SC
T
= 125 C, V
GE
= 720 V; V
GE
= 15 V, R
G
= 10
Non repetitive
10
s
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering (TO-268)
Weight
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
300
C
260
C
g
g
TO-247
TO-268
6
4
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1.0 mA, V
GE
= 0 V
= 250 A, V
CE
= V
GE
1200
V
V
3
6
I
CES
V
= 0.8 V
CES
Note 1
50
2.5
A
T
J
= 125 C
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
= I
C90,
V
GE
= 15 V
Note 2
3.0
2.8
3.4
V
V
T
J
= 125 C
Features
High Blocking Voltage
Epitaxial Silicon drift region
- fast switching
- small tail current
- low switching losses
MOS gate turn-on for drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
98708A (7/00)
TO-247 AD (IXSH)
(TAB)
TO-268 ( IXST)
(TAB)
G
E
I
C25
V
CES
V
CE(sat)
= 3.4 V
= 30 A
= 1200 V
G
C
E
IXSH 15N120BD1
IXST 15N120BD1
HIGH Voltage IGBT
with Diode
"S" Series - Improved SCSOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH15N120AU1 | IGBT with Diode |
| IXSH15N120B | High Voltage IGBT(VCES為1200V，VCE(sat)為3.4V的高電壓絕緣柵雙極晶體管) |
| IXSH16N60U1 | Low VCE(sat) IGBT with Diode(VCES為600V，VCE(sat)為1.8V的絕緣柵雙極晶體管(帶二極管）) |
| IXSH20N60U1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
| IXSH20N60AU1 | Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXST24N60B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Speed IGBT |
| IXST24N60BD1 | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXST30N60B | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXST30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXST30N60BD1 | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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