- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383201 > IXSK80N60B (IXYS CORP) High Current IGBT Short Circuit SOA Capability PDF資料下載
參數(shù)資料
| 型號(hào)： | IXSK80N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Current IGBT Short Circuit SOA Capability |
| 中文描述： | 160 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | IXSK80N60B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= 60 A; V
CE
= 10 V,
52
S
C
ies
C
oes
C
res
6600
660
196
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
240
85
90
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
60
45
ns
ns
ns
ns
mJ
140
180
4.2
280
280
7.0
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
60
60
4.8
190
260
6.7
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.26 K/W
0.15
K/W
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXSK 80N60B
IXSX 80N60B
TO-264 AA Outline
Millimeter
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Inches
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
Min.
.190
.100
.079
.044
.094
.114
.021
1.020
.780
Max.
.202
.114
.083
.056
.106
.122
.033
1.030
.786
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
Inductive load, T
J
=125
°
C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.7
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSX80N60B | High Current IGBT Short Circuit SOA Capability |
| IXSK | IGBT with Diode |
| IXSK40N60CD1 | IGBT with Diode |
| IXSX | IGBT with Diode |
| IXSX40N60CD1 | IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSM17N100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204 |
| IXSM17N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 17A I(C) | TO-204 |
| IXSM20N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-204AE |
| IXSM20N60A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-204AE |
| IXSM25N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。