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參數(shù)資料
| 型號： | IXSH35N120A |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage, High speed IGBT |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | IXSH35N120A |
1 - 4
2000 IXYS All rights reserved
TO-247 AD
GCE
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
70
35
A
A
A
140
I
= 70
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
High Voltage,
High speed IGBT
IXSH 35N120A
V
CES
I
C25
V
CE(sat)
= 1200 V
= 70 A
= 4 V
Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
1200
V
V
4
6
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
400
1.2
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
G
International standard package
JEDEC TO-247
G
High frequency IGBT with guaranteed
Short Circuit SOA capability
G
Fast Fall Time for switching speeds
up to 20 kHz
G
2nd generation HDMOS
TM
process
G
Low V
- for minimum on-state conduction
losses
G
MOS Gate turn-on
- drive simplicity
Applications
G
AC motor speed control
G
DC servo and robot drive
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
G
Welding
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
High power density
92774E (12/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IXSH35N120B | 功能描述:IGBT 晶體管 70 Amps 1200V 3.6 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH35N135A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD |
| IXSH35N140A | 功能描述:IGBT 晶體管 70 Amps 1400V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH40N60 | 制造商:IXYS Corporation 功能描述:Transistor IGBT N-Ch 600V 75A TO247AD |
| IXSH40N60A | 功能描述:IGBT 晶體管 HIGH SPEED IGBT 600V, 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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