- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383197 > IXGH24N60C (IXYS CORP) Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) PDF資料下載
參數(shù)資料
| 型號： | IXGH24N60C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IXGH24N60C |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 110 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 100 H
48
24
96
A
A
A
I
= 48
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250 A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250 A, V
CE
= V
GE
2.5
5
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15 V
2.1
2.5
V
98575 (11/98)
TO-268
(IXGT)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
E
Features
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
IXGH 24N60C
IXGT 24N60C
V
CES
I
C25
V
CE(sat)typ
= 2.1 V
t
fi
typ
= 600 V
= 48 A
= 60 ns
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
Preliminary data
G
IXYS reserves the right to change limits, test conditions, and dimensions.
C (TAB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH25N100AU1 | High speed IGBT with Diode |
| IXGH25N100U1 | High speed IGBT with Diode |
| IXGH25N120 | Low VCE(sat) High speed IGBT |
| IXGH25N120A | Low VCE(sat) High speed IGBT |
| IXGH25N100 | Low VCE(sat), High speed IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH24N60C4 | 功能描述:IGBT 模塊 High-Gain IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH24N60C4D1 | 功能描述:IGBT 模塊 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH24N60CD1 | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH25N100 | 功能描述:IGBT 50A 1000V TO-247AD RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXGH25N100A | 功能描述:IGBT 晶體管 HIGH SPEED IGBT 1000V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。