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參數(shù)資料
| 型號： | IXGH16N170 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 32 A, 1700 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | PLASTIC, TO-268, D3PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IXGH16N170 |
2003 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 32
= 3.5
= 290 ns
V
A
V
IXGH 16N170
IXGT 16N170
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98996(01/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
μ
A
500
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
T
J
= 25
°
C
T
J
= 125
°
C
2.7
3.3
3.5
V
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1700
V
1700
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 10
Clamped inductive load
32
A
16
A
80
A
SSOA
(RBSOA)
I
= 40
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
190
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°
C
260
°
C
M
d
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
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| IXGH17N100U1 | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH16N170_06 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH16N170A | 功能描述:IGBT 晶體管 32 Amps 1700 V 5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH16N170A_05 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH16N170AH1 | 功能描述:IGBT 晶體管 11 Amps 1700V 5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH16N60B2 | 制造商:IXYS Corporation 功能描述:IGBT Transistors 600V 16A |
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