參數(shù)資料
型號(hào)： IXGA10N60
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Low VCE(sat) IGBT, High speed IGBT
中文描述： 20 A, 600 V, N-CHANNEL IGBT, TO-263AA
封裝： TO-263AA, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 56K
代理商： IXGA10N60
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA/ IXGP/ IXGH10N60
IXGA/ IXGP/ IXGH10N60A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
4
8
S
C
ies
C
oes
C
res
750
100
30
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
50
15
25
70
25
45
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
100
200
0.4
600
300
0.6
ns
ns
mJ
ns
ns
mJ
10N60A
10N60A
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
ns
ns
mJ
ns
ns
ns
mJ
mJ
1
900
570
360
2.0
1.2
1500
2000
600
10N60
10N60A
10N60
10N60A
E
off
R
thJC
R
thCK
1.25 K/W
0.25
K/W
Inductive load, T
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 100
μ
H
V
CE
= 0.8 V
,
R
= R
= 150
Remarks: Switching times
may increase for V
CE
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the
IXGH 10N60U1 and IXGH 10N60AU1 data sheet.
Inductive load, T
J
= 125
°
C
I
= I
, V
GE
= 15 V,
L = 100
μ
H
V
CE
= 0.8 V
,
R
G
= R
off
= 150
Remarks: Switching times
may increase for V
CE
(Clamp) > 0.8 V
CES
, higher
T
J
or increased R
G
(Dimensions in inches and (mm))
Min. Recommended Footprint
Dim.
Millimeter
Min.
12.70
14.23
9.66
3.54
5.85
2.29
1.15
2.79
0.64
2.54
4.32
0.64
0.51
2.04
Inches
Min.
0.500
0.560
0.380
0.139
0.230
0.090
0.045
0.110
0.025
0.100
0.170
0.025
0.020
0.080
Max.
14.93
16.50
10.66
4.08
6.85
2.79
1.77
6.35
0.89
BSC
4.82
1.39
0.76
2.49
Max.
0.580
0.650
0.420
0.161
0.270
0.110
0.070
0.250
0.035
BSC
0.190
0.055
0.030
0.115
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
1. Gate
2. Collector
3. Emitter
4. Collector Bottom Side
Dim.
Millimeter
Min.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
Inches
Min.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
Max.
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Max.
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
TO-220 AB Outline
TO-263 AA Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
3.55
5.89
4.32
6.15 BSC
.140
0.232
.170
242 BSC
e
P
TO-247 AD Outline
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXGA10N60A 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High speed IGBT
IXGA10N60AU1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA
IXGA10N60U1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA
IXGA120N30TC 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXGA12N100 功能描述:IGBT 晶體管 24Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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