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參數(shù)資料
| 型號(hào)： | IXFX25N90 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 25A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直|第25A條（?。﹟對(duì)247VAR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 98K |
| 代理商： | IXFX25N90 |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
21
84
21
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
60
2.5
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
500
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
1000
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
2.5
4.5 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100
μ
A
2 mA
0.50
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
98677A (2/02)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg,
High dV/dt,
Low t
rr
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
IXFK 21N100Q
IXFX 21N100Q
V
DSS
= 1000 V
I
D25
= 21 A
R
DS(on)
= 0.50
t
rr
≤
250 ns
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