參數(shù)資料
型號: IXFN36N100
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs Single Die MOSFET
中文描述: 36 A, 1000 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MINIBLOC-4
文件頁數(shù): 3/4頁
文件大小: 122K
代理商: IXFN36N100
2001 IXYS All rights reserved
IXFN 36N100
V
GS
- Volts
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
I
D
0
10
20
30
40
50
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
8
16
24
32
40
T
J
- Degrees C
25
50
75
100
125
150
R
D
1.0
1.3
1.6
1.9
2.2
I
D
=18A
I
D
- Amperes
R
normalized to 0.5 I
D25
value
vs. I
D
0
10
20
30
40
50
R
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
DS
- Volts
0
5
10
15
20
25
I
D
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
0
20
40
60
80
V
GS
= 10V
V
GS
=10V
9V
8V
7V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
5V
5V
6V
T
J
= 25
o
C
I
D
= 36A
T
J
= 25
O
C
T
J
= 125
o
C
V
GS
=10V
9V
8V
7V
6V
T
J
= 125
O
C
6V
Figure 3.
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4.
R
normalized to 0.5 I
D25
value vs. T
J
相關(guān)PDF資料
PDF描述
IXFN36N60 HiPerFET Power MOSFET
IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFN39N90 30V N-Channel PowerTrench MOSFET
IXFN40N60 HiPerFET Power MOSFET
IXFK40N60 HiPerFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN36N110P 功能描述:MOSFET 36 Amps 1100V 0.2400 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN36N60 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN38N100P 功能描述:MOSFET 38 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN38N100Q2 功能描述:MOSFET 38 Amps 1000V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN38N100Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFET