參數(shù)資料
型號(hào)： IXFM21N50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
封裝： TO-204, 2 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 158K
代理商： IXFM21N50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
(T
J
= 25
°
C, unless otherwise specified)
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Test Conditions
Characteristic Values
Min. Typ.
Max.
21N50
24N50
26N50
0.25
0.23
0.20
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
21
S
C
iss
C
oss
C
rss
4200
450
135
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
16
33
65
30
25
45
80
40
ns
ns
ns
ns
V
GS
= 10 V, V
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
(External)
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
135
28
62
160
40
85
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
0.42
K/W
K/W
(TO-247 Case Style)
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Symbol
Test Conditions
Typ. Max.
I
S
V
GS
= 0 V
21N50
24N50
26N50
21N50
24N50
26N50
21
24
26
84
96
A
A
A
A
A
A
V
I
SM
Repetitive;
pulse width limited by T
JM
104
1.5
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
t
rr
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
250
400
ns
ns
μ
C
μ
C
A
A
Q
RM
1
2
I
RM
10
15
I
= I
-di/dt = 100 A/
μ
s,
V
R
= 100 V
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A1
b
D
6.4
1.53
1.45
11.4
3.42
1.60
.250
.060
.057
.450
.135
.063
22.22
.875
e
e1
10.67
5.21
11.17
5.71
.420
.205
.440
.225
L
p
p1
11.18
12.19
.440
.480
3.84
3.84
4.19
4.19
.151
.151
.165
.165
q
30.15 BSC
1.187 BSC
R
R1
12.58
3.33
13.33
4.77
.495
.131
.525
.188
s
16.64
17.14
.655
.675
TO-204 AE (IXFM) Outline
Pins: 1 - Gate, 2 - Source, Case - Drain
TO-247 AD (IXFH) Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min. Recommended Footprint
TO-268 Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
IXFH21N50
IXFM21N50
IXFH24N50
IXFM24N50
IXFT24N50
IXFH26N50
IXFM26N50
IXFT26N50
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFM21N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFM24N50 功能描述:MOSFET 500V 24A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFM26N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFM35N30 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFM40N30 功能描述:MOSFET 40 Amps 300V 0.088 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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