- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383188 > IXFM10N60 (IXYS Corporation) HIPERFET Power MOSFTETs PDF資料下載
參數(shù)資料
| 型號(hào)： | IXFM10N60 |
| 廠商： | IXYS Corporation |
| 英文描述： | HIPERFET Power MOSFTETs |
| 中文描述： | HIPERFET電力MOSFTETs |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IXFM10N60 |
2 - 4
2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
Millimeter
Min.
38.61 39.12
19.43 19.94
6.40
0.97
1.53
30.15
10.67 11.17
5.21
16.64 17.14
11.18 12.19
3.84
25.16 25.90
Inches
Min.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
Max.
Max.
A
B
C
D
E
F
G
H
J
K
Q
R
9.14
1.09
2.92
BSC
BSC
5.71
4.19
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
6
10
S
C
iss
C
oss
C
rss
4000
310
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
70
t
d(on)
t
r
t
d(off)
t
f
21
33
62
32
50
50
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
(External),
100
50
Q
g(on)
Q
gs
Q
gd
122
30
50
155
45
80
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
10N100
12N100
13N100
10
12
A
A
A
12.5
I
SM
Repetitive;
pulse width limited by T
JM
10N100
12N100
13N100
40
48
50
A
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
1.5
V
t
rr
T
J
=
T
J
= 125 C
25 C
250
400
ns
ns
Q
RM
T
J
=
T
J
= 125 C
25 C
1
2
C
C
I
RM
T
J
=
T
J
= 125 C
25 C
10
15
A
A
I
= I
-di/dt = 100 A/ s,
V
R
= 100 V
IXFH 10N100
IXFM 10N100
IXFH 12N100
IXFM 12N100
IXFH 13N100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFM10N65 | HIPERFET Power MOSFTETs |
| IXFM10N90 | HIPERFET Power MOSFTETs |
| IXFM12N50 | HIPERFET Power MOSFTETs |
| IXFM12N90 | HIPERFET Power MOSFTETs |
| IXFH10N60 | HIPERFET Power MOSFTETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFM10N65 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM10N90 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFM11N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM11N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM11N80 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。