參數(shù)資料
型號(hào)： IXFK32N50Q
廠(chǎng)商： IXYS CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.15Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 32 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 96K
代理商： IXFK32N50Q
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
32
128
32
A
A
A
45
mJ
1500
mJ
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
416
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
TO-247
6
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100
A
1
mA
R
DS(on)
0.15
HiPerFET
TM
Power MOSFETs
Q-Class
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
TO-264 AA (IXFK)
IXFK 32N50Q
IXFX 32N50Q
V
DSS
I
D25
R
DS(on)
= 0.15
= 500 V
=
32 A
t
rr
250 ns
98604B (7/00)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK32N50Q_04 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class
IXFK32N60 功能描述:MOSFET 32 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK32N80P 功能描述:MOSFET 32 Amps 800V 0.27 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK32N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK32N90P 功能描述:MOSFET Polar HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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