參數(shù)資料
型號(hào): IXFK180N10
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓100V,導(dǎo)通電阻8mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述: 180 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: PLASTIC, TO-264, 3 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 109K
代理商: IXFK180N10
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
25
50
75
100
V
DS
- Volts
0
1
2
3
4
5
I
D
0
50
100
150
200
V
GS
- Volts
2
4
6
8
I
D
0
20
40
60
80
100
T
J
- Degrees C
25
50
75
100
125
150
R
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
- Amperes
0
50
100
150
200
R
D
0.8
1.0
1.2
1.4
1.6
1.8
V
DS
- Volts
0.0
0.5
1.0
1.5
2.0
I
D
0
50
100
150
200
5V
V
GS
= 10V
V
GS
=10V
9V
8V
T
J
=125
O
C
T
J
=25
O
C
6V
6V
5V
T
J
= 25
o
C
I
D
=180A
V
GS
=10V
V
GS
=15V
T
J
= 25
O
C
T
J
= 125
o
C
V
GS
=10V
9V
8V
T
J
= 125
O
C
7V
7V
V
GS
=10V
V
GS
=15V
I
D
=90A
Lead Current Limit
IXF 180N10 P1
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFK 180N10
IXFX 180N10
相關(guān)PDF資料
PDF描述
IXFK21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFX21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFK21N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.50Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFK24N100 HiPerRF Power MOSFETs
IXFK24N100F HiPerRF Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK180N10_09 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiperFET Power MOSFETs
IXFK180N15P 功能描述:MOSFET 180 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK180N25T 功能描述:MOSFET 180A 250V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK185N10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 185A I(D) | TO-264AA
IXFK200N10P 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube