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參數(shù)資料
| 型號： | IXFH70N15 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導通電阻28mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 70 A, 150 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IXFH70N15 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
150
150
V
V
20
30
V
V
T
C
= 25 C
70
A
I
DM
I
AR
E
AR
E
AS
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
280
70
A
A
30
1.0
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
C
C
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
98583A (6/99)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
=
Test Conditions
Characteristic Values
Min. Typ.
Max.
A
150
V
V
GS(th)
V
DS
= V
GS
, I
D
= mA
2.0
4.0
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25
750
A
A
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
28
m
TO-268 (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Advanced Technical Information
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
IXFH 70N15
IXFT 70N15
V
DSS
I
D25
R
DS(on)
= 150 V
= 70 A
= 28 m
t
rr
250ns
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXFH70N20Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH70N30Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH74N20 | 功能描述:MOSFET 74 Amps 200V 0.03 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH74N20P | 功能描述:MOSFET 74 Amps 200V 0.034 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH75N10 | 功能描述:MOSFET 100V 75A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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