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參數(shù)資料
| 型號： | IXDP35N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with optional Diode |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IXDP35N60B |
2000 IXYS All rights reserved
2 - 4
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
C
ies
C
oes
C
res
1600
150
90
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
I
C
= 35 A, V
GE
= 15 V, V
CE
= 480 V
120
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
30
45
320
70
1.6
0.8
ns
ns
ns
ns
mJ
mJ
R
thJC
R
thCH
R
thCH
0.5 K/W
TO 247 Package with heatsink compound
TO 220 Package with heatsink compound
0.25
0.5
K/W
K/W
Inductive load, T
J
= 125°C
I
C
= 35 A, V
= ±15 V,
V
CE
= 300 V, R
G
= 10
Reverse Diode (FRED)
[D1 version only]
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
Symbol
Conditions
typ.
max.
V
F
I
F
= 35 A, V
GE
= 0 V
I
F
= 35 A, V
GE
= 0 V, T
J
= 125°C
2.1
1.6
2.4
V
V
I
F
T
C
= 25°C
T
C
= 90°C
45
25
A
A
I
RM
t
rr
I
F
= 15 A, -di
F
/dt = 400 A/μs, V
R
= 300 V
V
GE
= 0 V, T
J
= 125°C
13
90
A
ns
t
rr
I
F
= 1 A, -di
F
/dt = 100 A/μs, V
R
= 30 V, V
GE
= 0 V
40
ns
R
thJC
1.6 K/W
TO-220 AB Outline
Dim.
Millimeter
Min.
12.70
14.73
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
Inches
Min.
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.110
0.025
0.100
0.170
0.045
0.014
0.090
Max.
13.97
16.00
10.66
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
Max.
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
BSC
0.190
0.055
0.022
0.110
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
TO-247 AD Outline
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
P
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
Q
R
S
.216
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