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參數(shù)資料
| 型號(hào)： | IW4069UB |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 電容 |
| 英文描述： | CERAMIC CHIP/MIL-PRF-55681 |
| 中文描述： | 陶瓷芯片/mil-prf-55681 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 104K |
| 代理商： | IW4069UB |
IW4069UB
128
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
V
Guaranteed Limit
≥
-55
°
C
Symbol
Parameter
Test Conditions
25
°
C
≤
125
°
C
4
8
12.5
Unit
V
IH
Minimum High-Level
Input Voltage
V
OUT
=0.5V
V
OUT
=1.0 V
V
OUT
=1.5V
V
OUT
= V
CC
- 0.5 V
V
OUT
= V
CC
- 1 V
V
OUT
= V
CC
- 1.5 V
V
IN
=GND
5.0
10
15
4
8
12.5
4
8
12.5
V
V
IL
Maximum Low -Level
Input Voltage
5.0
10
15
1
2
2.5
1
2
2.5
1
2
2.5
V
V
OH
Minimum High-Level
Output Voltage
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
4.95
9.95
14.95
V
V
OL
Maximum Low-Level
Output Voltage
V
IN
= V
CC
5.0
10
15
0.05
0.05
0.05
±
0.1
0.05
0.05
0.05
±
0.1
0.05
0.05
0.05
±
1.0
V
I
IN
Maximum Input
Leakage Current
V
IN
= GND or V
CC
18
μ
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
= GND or V
CC
5.0
10
15
20
0.25
0.5
1.0
5.0
0.25
0.5
1.0
5.0
7.5
15
30
150
μ
A
I
OL
Minimum Output Low
(Sink) Current
V
IN
= GND or V
CC
U
OL
=0.4 V
U
OL
=0.5 V
U
OL
=1.5 V
V
IN
= GND or V
CC
U
OH
=2.5 V
U
OH
=4.6 V
U
OH
=9.5 V
U
OH
=13.5 V
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.36
0.9
2.4
mA
I
OH
Minimum Output
High (Source) Current
5.0
5.0
10
15
-2.0
-0.64
-1.6
-4.2
-1.6
-0.51
-1.3
-3.4
-1.15
-0.36
-0.9
-2.4
mA
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| IW4069UBD | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Hex Inverter High-Voltage Silicon-Gate CMOS |
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