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參數(shù)資料
| 型號： | IVA-14208-TR1 |
| 英文描述： | Resistors |
| 中文描述： | 硅雙極單片2.5 GHz的可變增益放大器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 113K |
| 代理商： | IVA-14208-TR1 |
6-186
IVA-14208, -14228
Guaranteed Electrical Specifications
All measurements reflect single-ended
(unbalanced) performance. T
case
= 25
°
C. V
CC
= 6 V, V
EE
= 0 V, V
GC
= 0 V, Z
L
= 50
IVA-14208
Min.
Typ. Max.
IVA-14228
Min.
Typ.
Symbol
Parameter
Units
Max.
GP
GP
f
3dB
GCR
Power Gain (|S
21
|
2
), f = 1 GHz
Gain Flatness, f = 0.05 to 2 GHz
3 dB Bandwidth
Gain Control Range
[2]
, f = 1 GHz,
V
GC
= 0 to 5 V
Reverse Isolation (|S
12
|
2
), f = 1 GHz,
V
GC
= 0 to 5 V
Input VSWR, f = 0.05 to 2.0 GHz,
V
GC
= 0 to 5 V
Output VSWR, f = 0.05 to 2.0 GHz,
V
GC
= 0 to 5 V
50
Noise Figure, f = 1 GHz
Output Power at 1 dB Gain,
Compression f = 1 GHz
dB
20
24
±
1.2
2.5
22
24
±
0.7
2.5
dB
GHz
2.0
2.2
dB
30
34
30
34
ISO
dB
37
40
VSWR
2:1
2:1
2:1
2.5:1
NF
P
ldB
dB
dBm
9.0
-2.0
9.0
-2.0
V
OUT
Pk-Pk Single-ended Output Voltage,
f = 1 GHz
mVpp
450
450
IP
3
t
D
I
cc
Third Order Intercept Point, f = 1 GHz
Group Delay, f = 1 GHz
dBm
psec
8
8
450
450
Supply Current
mA
28
38
48
28
38
48
Notes:
1. The recommended operating voltage range for these devices is 5 to 8 V. Typical performance as a function of voltage is shown in the
graphs on the following pages.
2. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2 V
may result in gain control increase rather than gain decrease. See figures 4 and 19.
IVA-14208, -14228 Absolute Maximum Ratings
[1]
Symbol
Parameter
Units
IVA-14208
IVA-14228
V
CC
-V
EE
P
in
V
GC
-V
EE
T
i
T
stg
P
t
Device Voltage, T
case
= 25
°
C
Input Power, T
case
= 25
°
C
Control Voltage, T
case
= 25
°
C
Junction Temperature+
Storage Temperature
Total Device Dissipation
Volts
dBm
Volts
°
C
°
C
mW
12
13
10
150
12
13
10
200
-65 to +150
1000
[2]
-65 to +200
1000
[3]
Thermal Resistance:
IVA-14208 Thermal Resistance Junction to Case
[4]
:
θ
jc
= 68
°
C/W
IVA-14228 Thermal Resistance Junction to Case
[4]
:
θ
jc
= 63
°
C/W
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
case
= 25
°
C. Derate at 14.7 mW/
°
C for T
case
> 82
°
C.
3. T
case
= 25
°
C. Derate at 15.9 mW/
°
C for T
case
> 137
°
C.
4. T
j
= 150
°
C.
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|---|---|
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