參數(shù)資料
型號: ITR9606-F
廠商: Everlight Electronics Co Ltd
文件頁數(shù): 1/8頁
文件大小: 341K
描述: OPTO INTERRUPTER
產(chǎn)品變化通告: ITR20001, ITR9606 Series Packing Change 16/Jun/2011
標(biāo)準(zhǔn)包裝: 35
檢測距離: 0.197"(5mm)
檢測方法: 可傳導(dǎo)的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發(fā)射極擊穿(最大): 30V
響應(yīng)時間: 15µs
安裝類型: 通孔
封裝/外殼: 開槽模塊
包裝: 散裝
類型: 無放大
工作溫度: -25°C ~ 85°C
LifecyclePhase:
Revision : 2
Expired Period: Forever
Release Date:2014-01-28 18:53:41.0
1
Copyright ? 2010, Everlight All Rights Reserved. Release Date : Jan.20.2014. Issue No: DRX-0000176 _Rev.2
www.everlight.com
 
Opto Interrupter
ITR9606-F
Features
$Fast response time
$High analytic
$Cut-off visible wavelength 籶=940nm
$High sensitivity
$Pb free
$This product itself will remain within RoHS compliant version
Description
$The   ITR9606-F consist of an infrared emitting diode and an NPN silicon phototransistor,    
encased side-by-side on converging optical axis in a black thermoplastic housing,
$The phototransistor receives radiation from the IRED only .This is the normal situation.
$But when an object is in between , phototransistor could not receives the radiation.
$For additional component information , please refer to IR928-6C-F and PT928-6C-F
Applications
$Mouse Copier
$Switch Scanner
$Floppy disk driver
$Non-contact Switching
$For Direct Board
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參數(shù)描述
ITR9608 制造商:Everlight Electronics Co 功能描述:
ITR-9608 功能描述:光學(xué)開關(guān)(透射型,光電晶體管輸出) Opto Interrupter RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
ITR9608-F 功能描述:光學(xué)開關(guān)(透射型,光電晶體管輸出) Opto Interrupter RoHS:否 制造商:Omron Electronics 輸出設(shè)備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風(fēng)格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
ITR9608-F_10 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:Opto Interrupter
ITR9702 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:Gallium arsenide infrared emitting diode which is coupled with a silicon photo transistor in a plastic housing