
PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561)283-4500 FAX: (561)286-8914
Website:
http://www.semi-tech-inc.com
CASE OUTLINE:
TYPE
:
IT130A-TO71
TO-71
PNP SILICON DUAL DIFFERENTIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base
Emitter to Base
Collector to Emitter
Collector Current
Power Dissipation TA = 25
°
C
Power Dissipation TC = 25
°
C
Storage Temperature
Operating Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25
°
C
PARAMETERS
Collector to Collector Voltage
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Voltage*
Saturation Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Current Gain at F =
Emitter Transition Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Output Capacitance
Frequency Cutoff
Transition Frequency
BVCBO
BVEBO
BVCEO
IC
PD
PD
Tstg
TJ
TL
45
7.0
45
50
Vdc
Vdc
Vdc
mAdc
Watts
Watts
°
C
°
C
°C
0.5 (Both Sides)
-65 to +200
-65 to +200
SYMBOL
BVCCO
BVEBO
BVCEO(sus)
BVCEO
ICBO
ICBO
ICEX
ICEX
IEBO
hFE
hFE
hFE
hFE
hFE
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(on)
hFE
CTE
CC1-C2
IC1-C2
Cob
f & b
fT
TEST CONDITIONS
I
C
=1.0mA
V
CB
=45V
V
CB
=45V, T
A
=150
°
C
V
EB
=5.0V
I
C
=10
μ
A, V
CE
=5.0V
I
C
=1.0mA, V
CE
=5.0V
I
C
=10
μ
A, V
CE
=5.0V, T
A
= -55
°
C
I
C
=0.5mA, I
B
=0.05mA
I
C
=10
μ
A, V
CE
=5.0V
V
EB
=0.5V
V
CC
=0
V
CC
=
±
60V
V
CB
=5.0V
I
C
=10
μ
A, V
CE
=5.0V
I
C
=1.0mA, V
CE
=5.0V
MIN
60
45
200
225
75
5
110
TYP
MAX
1.0
10
1.0
0.5
0.7
2.5
4.0
10
2.0
UNIT
Vdc
Vdc
Vdc
Vdc
nA
μ
A
μ
A
μ
A
nA
-
-
-
-
-
Vdc
Vdc
Vdc
Vdc
Vdc
-
pF
pF
nA
pF
MHz
MHz
Notes: *Pulse Width
≤
300usec 2% Duty Cycle
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