Specifications ispLSI 2064VE Switching Test Conditions + 3.3V R1 R2 CL* Device Output Test Poi" />
參數(shù)資料
型號: ISPLSI 2064VE-100LTN100
廠商: Lattice Semiconductor Corporation
文件頁數(shù): 12/17頁
文件大?。?/td> 0K
描述: IC PLD ISP 64I/O 10NS 100TQFP
標(biāo)準(zhǔn)包裝: 90
系列: ispLSI® 2000VE
可編程類型: 系統(tǒng)內(nèi)可編程
最大延遲時間 tpd(1): 10.0ns
電壓電源 - 內(nèi)部: 3 V ~ 3.6 V
邏輯元件/邏輯塊數(shù)目: 16
宏單元數(shù): 64
門數(shù): 2000
輸入/輸出數(shù): 64
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 100-LQFP
供應(yīng)商設(shè)備封裝: 100-TQFP(14x14)
包裝: 托盤
其它名稱: 220-1613
ISPLSI 2064VE-100LTN100-ND
ISPLSI2064VE-100LTN100
4
Specifications ispLSI 2064VE
Switching Test Conditions
+ 3.3V
R1
R2
CL*
Device
Output
Test
Point
*CL includes Test Fixture and Probe Capacitance.
0213A/2064V
Figure 2. Test Load
DC Electrical Characteristics
Over Recommended Operating Conditions
VOL
SYMBOL
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V = 3.3V and T = 25°C.
4. Maximum I
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I
.
Table 2-0007/2064VE
1
VOH
IIH
IIL
IIL-isp
PARAMETER
IIL-PU
IOS
2, 4
ICC
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
Input or I/O Low Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I
= -4 mA
0V ≤ V ≤ V (Max.)
0V ≤ V ≤ V
V = 3.3V, V
= 0.5V
V = 0.0V, V = 3.0V
f
= 1 MHz
OL
OH
IN
IL
IN
IL
IN
IL
CC
OUT
CLOCK
IL
IH
CONDITION
MIN.
TYP.
MAX.
UNITS
3
2.4
90
0.4
10
-10
-150
-100
V
A
mA
CC
A
OUT
CC
(V
– 0.2)V ≤ V ≤ V
V ≤ V ≤ 5.25V
IN
CC
IN
CC
Input Pulse Levels
Table 2-0003/2064VE
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
≤ 1.5 ns 10% to 90%
TEST CONDITION
R1
R2
CL
A
316
348
35pF
B
348
35pF
316
348
35pF
Active High
Active Low
C
316
348
5pF
348
5pF
Active Low to Z
at V +0.5V
OL
Active High to Z
at V
-0.5V
OH
Table 2-0004/2064V
Output Load Conditions (see Figure 2)
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參數(shù)描述
ISPLSI2064VE-100LTN100 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2064VE-100LTN44 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2064VE-135LB100 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2064VE-135LJ44 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2064VE135LT100 制造商:Lattice Semiconductor Corporation 功能描述: