參數(shù)資料
型號: ISO255
廠商: Texas Instruments, Inc.
元件分類: 運動控制電子
英文描述: Precision, Powered, Three-Port Isolated Instrumentation Amplifier(精密、三端口隔離緩沖放大器(帶變壓器))
中文描述: 精密,技術支持,三端口隔離儀表放大器(精密,三端口隔離緩沖放大器(帶變壓器))
文件頁數(shù): 9/9頁
文件大小: 130K
代理商: ISO255
9
ISO255
extinction voltage provides a lower, more conservative volt-
age from which to derive a safe continuous rating. In
production, measuring at a level somewhat below the ex-
pected inception voltage and then de-rating by a factor
related to expectations about system transients is an ac-
cepted practice.
Partial Discharge Testing
Not only does this test method provide far more qualitative
information about stress-withstand levels than did previous
stress tests, but it provides quantitative measurements from
which quality assurance and control measures can be based.
Tests similar to this test have been used by some manufac-
turers, such as those of high-voltage power distribution
equipment, for some time, but they employed a simple
measurement of RF noise to detect ionization. This method
was not quantitative with regard to energy of the discharge,
and was not sensitive enough for small components such as
isolation amplifiers. Now, however, manufacturers of HV
test equipment have developed means to quantify partial
discharge. VDE in Germany, an acknowledged leader in
high-voltage test standards, has developed a standard test
method to apply this powerful technique. Use of partial
discharge testing is an improved method for measuring the
integrity of an isolation barrier.
To accommodate poorly-defined transients, the part under
test is exposed to voltage that is 1.6 times the continuous-
rated voltage and must display less than or equal to 5pC
partial discharge level in a 100% production test.
APPLICATIONS
The ISO255 isolation amplifiers are used in three categories
of applications:
Accurate isolation of signals from high voltage ground
potentials
Accurate isolation of signals from severe ground noise and
Fault protection from high voltages in analog measure-
ments
FIGURE 3. Conditioning a Bridge Circuit.
V
OUT
+V
S1
–V
S1
Com1
GND1
+V
IN
–V
IN
4
3
28
27
26
Com2
+V
S2
–V
S2
GND2
12
11
10
25
14
ISO255
220nF
+R
G
–R
G
220nF
7
2
3
6
2
4
6
4
0.1μF
220nF
220nF
2.2μF
+V
S3
GND3
+15V
OPA27
–V
S1
100k
10k
10k
+V
S1
0.1μF
1M
Offset
200k
+15V
+15V
45k
V
OUT
–15V
22k
22k
22k
22k
OPA27
–V
S1
+V
S1
REF102
+V
1μF Tantalum
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