參數(shù)資料
型號: ISO107
元件分類: 隔離放大器
英文描述: High-Voltage, Internally Powered ISOLATION AMPLIFIER
中文描述: 高電壓,內(nèi)部隔離放大器技術(shù)
文件頁數(shù): 3/8頁
文件大?。?/td> 119K
代理商: ISO107
3
ISO107
ABSOLUTE MAXIMUM RATINGS
Supply Without Damage....................................................................
±
18V
V
, Sense Voltage ............................................................................
±
50V
Com 1 to Gnd 1 or Com 2 to Gnd 2 ...........................................
±
200mV
Enable, Sync ...........................................................................0V to +V
Continuous Isolation Voltage..................................................... 2500Vrms
V
, dv/dt ...................................................................................... 20kV/
μ
s
Junction Temperature...................................................................... 150
°
C
Storage Temperature..................................................... –25
°
C to +125
°
C
Lead Temperature, (soldering, 10s) ................................................ 300
°
C
Output Short to Gnd 2 Duration.............................................. Continuous
±
V
CC1
to Gnd 1 Duration .......................................................... Continuous
PIN CONFIGURATION
PACKAGE INFORMATION
(1)
PACKAGE DRAWING
NUMBER
MODEL
PACKAGE
ISO107
32-Pin Side-Braze Ceramic
210
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
Top View
DIP
1
2
3
4
32
31
30
29
20
19
18
17
13
14
15
16
NC
+V
NC
–V
Com 2
V
Sense
Gnd 2
NC
Gnd 1
V
Com 1
IN
–V
Sync*
+V
Enable
CC2
CC2
*Operation requires that this pin be grounded or driven with TTL levels.
ELECTROSTATIC
DISCHARGE SENSITIVITY
Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
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