參數(shù)資料
型號(hào)： ISL9N310AP3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 62 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 5/11頁(yè)
文件大?。?/td> 149K
代理商： ISL9N310AP3
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
100
1000
0.1
1
10
30
3000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
0
2
4
6
8
10
0
10
20
30
40
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 36A
I
D
= 10A
WAVEFORMS IN
DESCENDING ORDER:
0
50
100
150
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 13.5A
t
d(OFF)
t
r
t
f
t
d(ON)
0
50
100
150
200
250
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 10V, V
DD
= 15V, I
D
= 13.5A
t
d(OFF)
t
r
t
d(ON)
t
f
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
相關(guān)PDF資料
PDF描述
ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N312AD3 POWER SUP SWITCHER 41W 24V MED
ISL9N312AD3ST PS MEDICAL SWITCHING 12V 4.7A
ISL9N312AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N310AP3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220AB
ISL9N310AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AW1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N312AD3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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