參數(shù)資料
型號(hào): ISL9N310AD3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述: 35 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 8/11頁
文件大小: 149K
代理商: ISL9N310AD3ST
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
PSPICE Electrical Model
.SUBCKT ISL9N310AP3 2 1 3 ;
rev May 2001
CA 12 8 1.1e-9
CB 15 14 1.3e-9
CIN 6 8 1.5e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 30.9
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.76e-9
LSOURCE 3 7 5.12e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 3.46
RLDRAIN 2 5 10
RLGATE 1 9 67.6
RLSOURCE 3 7 51.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 5.5e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*300),2.5))}
.MODEL DBODYMOD D (IS = 7e-12 RS = 4.7e-3 TRS1 = 1.9e-3 TRS2 = 2.2e-6 XTI=3 CJO = 1.4e-9 TT = 6e-9 M = 0.52 VJ=0.35)
.MODEL DBREAKMOD D (RS = 1.5e-1 TRS1 = 2.48e-3 TRS2 = -2.0e-5)
.MODEL DPLCAPMOD D (CJO = 3.85e-10 IS = 1e-30 N = 10 M = 0.28)
.MODEL MMEDMOD NMOS (VTO = 1.5 KP = 5.5 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.46)
.MODEL MSTROMOD NMOS (VTO = 1.8 KP = 80 IS = 1e-30 LAMBDA=0.05 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.22 KP = 0.06 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 34.6 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.8e-4 TC2 = -2.3e-8)
.MODEL RDRAINMOD RES (TC1 = 2.1e-2 TC2 = 2e-5)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-7)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -8e-4 TC2 = -10.3e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.9e-3 TC2 = 5e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.0 VOFF= -1.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.0 VOFF= -5.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
14
13
S2B
CA
CB
EGS
EDS
14
8
13
8
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
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參數(shù)描述
ISL9N310AD3ST_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
ISL9N310AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AP3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220AB
ISL9N310AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N310AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube