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參數(shù)資料
| 型號： | ISL9K860P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8A, 600V Stealth⑩ Dual Diode |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 144K |
| 代理商： | ISL9K860P3 |
2002 Fairchild Semiconductor Corporation
April 2002
I
ISL9K860P3 Rev. C
ISL9K860P3
8A, 600V Stealth Dual Diode
General Description
The ISL9K860P3 is a Stealth dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth family exhibits low
reverse recovery current (I
RRM
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
Soft Recovery. . . . . . . . . . . . . . . . . . . .t
b
/ t
a
> 2.5
Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
Operating Temperature . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings (per leg)
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Parameter
Ratings
600
600
600
8
16
16
100
85
20
-55 to 175
Units
V
V
V
A
A
A
A
W
mJ
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147
o
C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
300
260
°C
°C
JEDEC TO-220AB
A
1
K
A
2
CATHODE
(FLANGE)
CATHODE
ANODE 1
ANODE 2
Package
Symbol
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參數(shù)描述 |
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| ISL9K860P3_Q | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| ISL9N2357D3ST | 功能描述:MOSFET 30V 35a NCh MOSFET 0.007 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N302AP3 | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N302AS3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N302AS3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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