參數資料
型號： ISL9G1260ES3
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB
中文描述： 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展|甲一（c）|至263AB
文件頁數： 1/11頁
文件大小： 149K
代理商： ISL9G1260ES3
2001 Fairchild Semiconductor Corporation
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3 Rev. A
File Number
5019
ISL9G1260EG3, ISL9G1260EP3, ISL9G1260ES3
600V, SMPS II LGC Series N-Channel IGBT
The ISL9G1260EG3, ISL9G1260EP3 and ISL9G1260ES3
are Low Gate Charge (LGC) SMPS II IGBTs combining the
fast switching speed of the SMPS IGBTs with lower gate
charge and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high
voltage switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
Power Factor Correction (PFC) Circuits
Full Bridge Topologies
Half Bridge Topologies
Push-Pull Circuits
Uninterruptible Power Supplies
Zero Voltage and Zero Current Switching Circuits
Formerly Developmental Type TA49367.
Features
>100kHz Operation at 390V,12A
200kHz Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . .72ns at T
J
= 125
o
C
Low Gate Charge. . . . . . . . . . . . . . . . .23nC at V
GE
= 15V
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150mJ
Low Conduction Loss
Symbol
Ordering Information
PART NUMBER
ISL9G1260EG3
ISL9G1260EP3
ISL9G1260ES3
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.,
ISL9G1260ES3T.
Packaging
JEDEC STYLE TO-247
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
G1260EG3
G1260EP3
G1260ES3
C
E
G
JEDEC TO-220AB
JEDEC TO-263AB
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,598,461
4,605,948
4,620,211
4,631,564
4,682,195
4,684,413
4,694,313
4,717,679
4,803,533
4,809,045
4,809,047
4,810,665
4,888,627
4,890,143
4,901,127
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
COLLECTOR
(FLANGE)
C
E
G
COLLECTOR
(FLANGE)
G
EC
COLLECTOR
(FLANGE)
G
E
Data Sheet
January 2001
[ /Title
(ISL9
G1260
EG3,
ISL9G
1260E
P3,
ISL9G
1260E
S3)
/Subjec
t
(600V,
SMPS
II LGC
Series
N-
Chann
el
IGBT)
/Autho
r ()
/Keyw
ords
(Intersi
l
Corpor
ation,
semico
nducto
r,
600V,
SMPS
II LGC
Series
N-
Chann
el
IGBT,
相關PDF資料
PDF描述
ISL9G1260ES3T TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB
ISL9G2060EG3 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-247
ISL9G2060EP3 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-220AB
ISL9G2060ES3 TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-263AB
ISL9G2060ES39A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 35A I(C) | TO-263AB
相關代理商/技術參數
參數描述
ISL9K1560G3 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K1560G3 制造商:Fairchild Semiconductor Corporation 功能描述:Fast Recovery Power Rectifier
ISL9K1560G3_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K18120G3 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ISL9K18120G3_Q 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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