FN6046.8 February 28, 2006 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND TRANSISTOR COUNT: 518 PROCESS: Si Gate CMOS FIGURE 14. DRI" />
參數(shù)資料
型號: ISL8491IB-T
廠商: Intersil
文件頁數(shù): 4/16頁
文件大?。?/td> 0K
描述: IC TXRX RS485/422 5V ESD 14SOIC
標準包裝: 2,500
類型: 收發(fā)器
驅(qū)動器/接收器數(shù): 1/1
規(guī)程: RS422,RS485
電源電壓: 4.5 V ~ 5.5 V
安裝類型: 表面貼裝
封裝/外殼: 14-SOIC(0.154",3.90mm 寬)
供應商設(shè)備封裝: 14-SOICN
包裝: 帶卷 (TR)
12
FN6046.8
February 28, 2006
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
518
PROCESS:
Si Gate CMOS
FIGURE 14. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL8483, ISL8488, ISL8489)
FIGURE 15. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL8483, ISL8488, ISL8489)
FIGURE 16. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL8485, ISL8490, ISL8491)
FIGURE 17. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL8485, ISL8490, ISL8491)
Typical Performance Curves VCC = 5V, TA = 25°C, ISL8483 thru ISL8491; Unless Otherwise Specified (Continued)
TIME (400ns/DIV)
0
R
E
CEIVER
OUTPUT
(V
)
3
4
1
2
RDIFF = 54, CL = 100pF
0
5
DRIVE
R
OUT
P
UT
(V
)
0
5
DRIVER
INP
U
T
(V
)
DI
RO
A/Y
B/Z
TIME (400ns/DIV)
0
DI
RECEIVER
OUTPUT
(V)
3
4
1
2
DRIVE
R
OUT
P
UT
(V
)
0
5
0
5
DRIV
E
R
INPUT
(V)
RDIFF = 54, CL = 100pF
B/Z
A/Y
RO
TIME (10ns/DIV)
0
RECEIVER
OUTPUT
(V)
3
4
1
2
RDIFF = 54, CL = 100pF
DI
A/Y
RO
0
5
D
R
IV
ER
OU
TPU
T
(V
)
0
5
DR
IV
ER
INP
U
T
(V
)
B/Z
TIME (10ns/DIV)
0
DI
RO
RECE
IV
ER
OUTPUT
(V
)
3
4
1
2
DRIV
E
R
OUTPUT
(V
)
0
5
0
5
DRIV
E
R
INPUT
(V)
RDIFF = 54, CL = 100pF
B/Z
A/Y
ISL8483, ISL8485, ISL8488, ISL8489, ISL8490, ISL8491
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