參數(shù)資料
型號(hào): ISL84515IBZ-T
廠商: Intersil
文件頁數(shù): 10/11頁
文件大小: 0K
描述: IC SWITCH SPST 8SOIC
標(biāo)準(zhǔn)包裝: 2,500
功能: 開關(guān)
電路: 1 x SPST- NC
導(dǎo)通狀態(tài)電阻: 20 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 2.4 V ~ 12 V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOIC
包裝: 帶卷 (TR)
8
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog-signal
paths and V+ or GND.
Typical Performance Curves TA = 25oC, Unless Otherwise Specified
FIGURE 7. ON RESISTANCE vs SUPPLY VOLTAGE
FIGURE 8. ON RESISTANCE vs SWITCH VOLTAGE
FIGURE 9. CHARGE INJECTION vs SWITCH VOLTAGE
FIGURE 10. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
R
ON
(
)
V+ (V)
25
15
5
3
4
5
6
7
8
9
10
11
12
13
25oC
-40oC
85oC
10
20
ICOM = 1mA
VCOM = (V+) - 1V
R
ON
(
)
VCOM (V)
0
4
6
8
10
12
2
4
6
8
10
12
14
25oC
-40oC
85oC
V+ = 12V
10
15
20
25
V+ = 3.3V
ICOM = 1mA
25oC
85oC
-40oC
7
9
11
13
15
17
19
V+ = 5V
25oC
-40oC
85oC
Q
(p
C)
VCOM (V)
012
34
5
0
10
20
30
40
50
V+ = 3.3V
V+ = 5V
V+ (V)
25
3.0
2.5
2.0
1.5
1.0
0.5
34
6789
10
11
12
13
V
INH
AND
V
INL
(V)
-40oC
85oC
VINH
VINL
25oC
85oC
25oC
ISL84514, ISL84515
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