FN6034.1 November 19, 2004 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP) GND TRANSISTOR COUNT 422 PROCESS Si Gate CMOS FIGURE 9. SUPPLY C" />
參數(shù)資料
型號: ISL83386EIV
廠商: Intersil
文件頁數(shù): 10/10頁
文件大?。?/td> 0K
描述: IC 3DRVR/2RCVR RS232 3V 20-TSSOP
標(biāo)準(zhǔn)包裝: 74
類型: 收發(fā)器
驅(qū)動器/接收器數(shù): 3/2
規(guī)程: RS232
電源電壓: 3 V ~ 5.5 V
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 20-TSSOP
包裝: 管件
9
FN6034.1
November 19, 2004
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP)
GND
TRANSISTOR COUNT
422
PROCESS
Si Gate CMOS
FIGURE 9. SUPPLY CURRENT vs LOAD CAPACITANCE
WHEN TRANSMITTING DATA
FIGURE 10. SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 11. VL SUPPLY CURRENT vs VL VOLTAGE
Typical Performance Curves VCC = 3.3V, TA = 25oC (Continued)
10
15
20
25
30
45
35
40
0
1000
2000
3000
4000
5000
LOAD CAPACITANCE (pF)
SUPP
L
Y
CURRENT
(m
A)
20kbps
250kbps
120kbps
SUPP
L
Y
C
URRENT
(m
A)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
0.5
1.0
1.5
2.0
SUPPLY VOLTAGE (V)
2.5
3.0
3.5
NO LOAD
ALL OUTPUTS STATIC
I L
(A)
VL (V)
NO LOAD
ALL OUTPUTS STATIC
2.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2.5
6.5
7.0
1n
10n
100n
1
10
100
10m
1m
VCC = 3.3V
ISL83386E
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