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參數(shù)資料
| 型號： | ISL6614IRZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features |
| 中文描述： | 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16 |
| 封裝： | 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MO-220VGGC, QFN-16 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 331K |
| 代理商： | ISL6614IRZ-T |
1
FN9155.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL6614
Dual Advanced Synchronous Rectified
Buck MOSFET Drivers with Protection
Features
The ISL6614 integrates two ISL6613 MOSFET drivers and is
specifically designed to drive two independent power
channels in a Multi-Phase interleaved buck converter
topology. These drivers combined with HIP63xx or ISL65xx
Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6614 drives both the upper and lower gates
simultaneously
over a range from 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during startup. The over-
temperature protection feature prevents failures resulting
from excessive power dissipation by shutting off the outputs
when its junction temperature exceeds 150°C (typically). The
driver resets once its junction temperature returns to 108°C
(typically).
The ISL6614 also features a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
Pin-to-pin Compatible with HIP6602 SOIC family for Better
Performance and Extra Protection Features
Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
Internal Bootstrap Schottky Diode
Bootstrap Capacitor Overcharging Prevention
Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Three-State PWM Input for Output Stage Shutdown
Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
Pre-POR Overvoltage +Protection
VCC Undervoltage Protection
Over Temperature Protection (OTP) with 42°C Hysteresis
Expandable Bottom Copper Pad for Enhanced Heat
Sinking
QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
Core Regulators for Intel and AMD Microprocessors
High Current DC-DC Converters
High Frequency and High Efficiency VRM and VRD
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
Data Sheet
July 25, 2005
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6614 | 64 x 1 x 2 dual independent synchronous FIFO memories 24-SOIC -40 to 85 |
| ISL6614CR | 256 x 1 x 2 dual independent synchronous FIFO memories 24-SOIC -40 to 85 |
| ISL6614CRZ | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features |
| ISL6614CRZ-T | 256 x 1 x 2 dual independent synchronous FIFO memories 28-SOIC -40 to 85 |
| ISL6614CRZA | Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features |
相關(guān)代理商/技術(shù)參數(shù) |
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| ISL6614IRZ-TR5238 | 功能描述:IC DRVR DUAL SYNC BUCK 16-QFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6615ACBZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6615ACBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:6,000 系列:* |
| ISL6615ACRZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:6,000 系列:* |
| ISL6615ACRZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:6,000 系列:* |
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