參數(shù)資料
型號: ISL6144IVZA
廠商: INTERSIL CORP
元件分類: MOSFETs
英文描述: High Voltage ORing MOSFET Controller
中文描述: 2 A BUF OR INV BASED MOSFET DRIVER, PDSO16
封裝: ROHS COMPLIANT, PLASTIC, MO-153AB, TSSOP-16
文件頁數(shù): 10/14頁
文件大?。?/td> 404K
代理商: ISL6144IVZA
5
Absolute Maximum Ratings TA = 25oC
Thermal Information
VIN, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +100V
GATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VIN+12V
HVREF. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VIN- 5V
COMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VOUT
VSET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VOUT-5V
FAULT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CLASS 2
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . +10 to +75V
Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . -40°C to +105°C
Thermal Resistance (Typical, Note 1)
θJA (°C/W) θJC (°C/W)
TSSOP Package (Note 1) . . . . . . . . . .
90
N/A
QFN Package (Notes 3, 4). . . . . . . . . .
35
5
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA is measured with the component mounted on a high effective thermal conductivity test board in free air. (See Tech Brief, #TB379.1 for
details.)
2. All voltages are relative to GND, unless otherwise specified.
3. For
θ
JC, the "case temp" location is the center of the exposed metal pad on the package underside.
4.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “die attach” features. (See Tech
Brief, #TB379 for details.)
Electrical Specifications
VIN = 48V, TA = -40
oC to 105oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BIAS “VIN
POR Rising
PORL2H
VIN Rising to VGATE > VIN+7.5V
10
-
V
12V Bias Current
I12V
VIN = 12V, VGATE = VIN + VGQP
-3.5
-
mA
48V Bias Current
I48V
VIN = 48V, VGATE = VIN + VGQP
-4.5
-
mA
75V Bias Current
I75V
VIN = 75V, VGATE = VIN + VGQP
-5
-
mA
GATE
Charge Pump Voltage
VGQP
VIN = 12V to 75V
VIN+9
VIN+10.5
VIN+12
V
Gate Low Voltage Level
VGL
VIN - VOUT < 0V
-0.3
VIN
VIN+0.5
V
Low Pull Down Current
IPDL
* Cgs = 39nF, IPDL = Cgs*dVgs/Ttofs
-5
-
mA
High Pull Down Current
IPDH
* Cgs = 39nF, IPDH = Cgs*dVgs/Ttoff
-2
-
A
Slow Turn-off Time
Ttoffs
Cgs = 39nF
-
100
s
Fast Turn-off Time
Ttoff
Turn-off from VGATE = VIN+VGQP to VIN+1V with
Cgs = 39nF (includes HS Comparator delay time)
-
250
300
ns
Start up “Turn-On” Time
TON
Turn-on from VGATE = VIN to VIN+ 7.5V into 39nF
-
1
-
ms
GATE Turn-On Current
ION
* VIN = 10V to 75V
-
1
-
mA
CONTROL AND REGULATION I/O
HR Amplifier Forward Voltage
Regulation
VFWD_HR
ISL6144 controls voltage across FET Vds to
VFWD_HR during static forward operation at loads
resulting in I*rDS(ON)< VFWD_HR
10
20
30
mV
HS COMP Externally
Programmable Threshold
VTH(HS)
* Externally programmable threshold for noise
sensitivity (System Dependant), typical 0.05 to
0.3V
0
0.05
5.3
V
HS Comparator Offset Voltage
VOS(HS)
-40
0
25
mV
COMP Input Current (bias
current)
ICOMP
-1.1
-
A
ISL6144
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