參數資料
| 型號： | ISL55100BIRZ |
| 廠商： | Intersil |
| 文件頁數： | 14/14頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC COMP DRVR/WINDOW 18V 72-QFN |
| 標準包裝： | 30 |
| 類型： | 收發(fā)器 |
| 驅動器/接收器數： | 4/4 |
| 規(guī)程： | LVDS |
| 電源電壓： | 15 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 72-VFQFN 裸露焊盤 |
| 供應商設備封裝： | 72-QFN-EP（10x10） |
| 包裝： | 管件 |
9
FN6229.1
November 24, 2008
ground. This same capacitor combination should be placed
at each supply pin to ground if split supplies are to be used.
Power Dissipation Considerations
Specifying continuous data rates, driver loads and driver
level amplitudes are key in determining power supply
requirements as well as dissipation/cooling necessities.
Driver Output patterns also impact these needs. The faster
the pin activity, the greater the need to supply current and
remove heat.
frequency of operation. These graphs are based on driving
6.0/0.0V out into a 1k
Ω load. Theta JA for the device
package is 23.0, 16.6 and 14.9°C/W based on Airflows of 0,
1 and 2.5 meters per second. The device is mounted per
Note 1 under “Thermal Information” on page 4. With the high
speed data rate capability of the ISL55100B, it is possible to
exceed the +150°C “ absolute maximum junction
temperature” as operating conditions and frequencies
increase. Therefore, it is important to calculate the maximum
junction temperature for the application to determine if
operating conditions need to be modified for the device to
remain in the safe operating area.
The maximum power dissipation allowed in a package is
determined according to Equation 1:
where:
TJMAX = Maximum junction temperature
TAMAX = Maximum ambient temperature
θJA = Thermal resistance of the package
PDMAX = Maximum power dissipation in the package
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads.
Power also depends on number of channels changing state,
frequency of operation. The extent of continuous active
pattern generation/reception will greatly effect dissipation
requirements.
The power dissipation curves (Figure 17), provide a way to
see if the device will overheat. The maximum safe power
temperature vs operating frequency can be found
graphically in Figure 18. This graph is based on the package
type Theta JA ratings and actual current/wattage
requirements of the ISL55100B when driving a 1k load with a
6V High Level and a 0V Low Rail. The temperatures are
indicated as calculated junction temperature over the
ambient temperature of the user’s system. Plots indicate
temperature change as operating frequency increases (the
graph assumes continuous operation). The user should
evaluate various heat sink/cooling options in order to control
the ambient temperature part of the equation. This is
especially true if the users applications require continuous,
high speed operation.
The reader is cautioned against assuming the same level of
thermal performance in actual applications. A careful
inspection of conditions in your application should be
conducted. Great care must be taken to ensure Die
Temperature does not exceed the +150°C Absolute
Maximum Thermal Limits.
Important Note: The ISL55100B package metal plane is
used for heat sinking of the device. It is electrically
connected to the negative supply potential (VEE). If VEE
is tied to ground, the thermal pad can be connected to
ground. Otherwise, the thermal pad (VEE) must be
isolated from other power planes.
Power Supply Sequencing
The ISL55100B references every supply with respect to
VEE. Therefore apply VEE, then VCC followed by the VH,VL
busses, then the COMP High and Comp Low followed by the
CVA and CVB Supplies. Digital Inputs should be set with a
differential bias as soon as possible. In cases where VEXT is
being utilized (VEXT = VEE + 5.5V), it should be powered up
immediately after VCC. Basically, no pin should be biased
above VCC or below VEE.
Data Rates
contain two transitions within each period. A digital
application that requires a new test pattern every 50ns would
be running at a 20MHz Data Rate. Figure 19 reveals 100ns
period, in 10MHz frequency parlance, results in two 50ns
digital patterns.
ESD Protection
Figure 6 is the block diagram depicting the ESD protection
networks and the VOH upper FET body diode.
P
DMAX
T
JMAX - TAMAX
Θ
JA
---------------------------------------------
=
(EQ. 1)
ISL55100B
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