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參數(shù)資料
| 型號： | ISL54222AIRUEVAL1Z |
| 廠商： | Intersil |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 0K |
| 描述： | EVAL BOARD 1 FOR ISL54222AIRU |
| 標準包裝： | 1 |
| 系列： | * |
4
FN6902.1
February 4, 2010
Absolute Maximum Ratings
Thermal Information
VDD to GND. . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 3.5V
Input Voltages
HSD2x, HSD1x (Note 6) . . . . . . . . . . . . . . . . - 0.3V to 6V
Output Voltages
D+, D- (Note 6) . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V
Continuous Current (HSD2x, HSD1x) . . . . . . . . . . . ±40mA
Peak Current (HSD2x, HSD1x)
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . ±100mA
ESD Rating:
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . >8kV
Human Body Model, (I/O pins to GND). . . . . . . . . . >12kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . >500V
Charged Device Model . . . . . . . . . . . . . . . . . . . . .>2.2kV
Latch-up Tested per JEDEC; Class II Level A . . . . . at +85°C
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
10 Ld TDFN (Notes 8, 9) . . . . . . . .
55
18
165
65
160
100
160
105
Maximum Junction Temperature (Plastic Package). . +150°C
Maximum Storage Temperature Range. . . . . -65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . -40°C to +85°C
VDD Supply Voltage Range . . . . . . . . . . . . . . . 1.8V to 3.3V
Logic Control Input Voltage . . . . . . . . . . . . . . . . 0V to VDD
Analog Signal Range . . . . . . . . . . . . . . . . . . . . . 0V to 3.3V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
6. Signals on HSD1x, HSD2x, D+,D- exceeding GND by specified amount are clamped. Signals on OE and SEL exceeding VDD or
GND by specified amount are clamped. Limit current to maximum current ratings.
7. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
8. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach”
features. See Tech Brief TB379.
9. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
10. For θJC, the “case temp” location is taken at the package top center.
Electrical Specifications - 1.8V to 3.3V Supply
Test Conditions: VDD = +3.3V, GND = 0V, VSELH = 1.4V, VSELL = 0.5V,
Boldface limits apply over the operating temperature range,
-40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 12, 13) TYP
MAX
(Notes 12, 13) UNITS
ANALOG SWITCH CHARACTERISTICS
ON-Resistance, rON (High-
Speed)
VDD = 1.8V, SEL = 0.5V or 1.4V,
OE = 0.5V, IDx = 40mA, VHSD1x or
Note 16)
25
-
5.7
8
Ω
Full
-
-
10
Ω
rON Matching Between
Channels, ΔrON (High-Speed)
VDD = 1.8V, SEL = 0.5V or 1.4V,
OE = 0.5V, IDx = 40mA, VHSD1x or
VHSD2 x = Voltage at max rON,
25
-
0.072
0.5
Ω
Full
-
-
0.55
Ω
rON Flatness, RFLAT(ON)
(High-Speed)
VDD = 1.8V, SEL = 0.5V or 1.4V,
OE = 0.5V, IDx = 40mA, VHSD1x or
25
-
0.60
0.9
Ω
Full
-
-
1
Ω
OFF Leakage Current,
IHSD1x(OFF)
VDD = 3.3V, SEL = VDD and OE = 0V or
OE = VDD, VDx = 0.3V, 3V, VHSD1X = 3V,
0.3V, VHSD2x = 0.3V, 3V
25
-15
0.35
15
nA
Full
-20
-
20
nA
ON Leakage Current,
IHSD1x(ON)
VDD = 3.3V, SEL = OE = 0V, VDx = 0.3V,
3V, VHSD1X =0.3V, 3V, VHSD2x = 3V,
0.3V
25
-20
5
20
nA
Full
-25
-
25
nA
OFF Leakage Current,
IHSD2x(OFF)
VDD = 3.3V, SEL = OE = 0V or OE = VDD,
VDx = 3V, 0.3V, VHSD2x = 0.3V, 3V,
VHSD1X = 3V, 0.3V
25
-15
0.26
15
nA
Full
-20
-
20
nA
ISL54222A
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