參數(shù)資料
型號(hào): IS65C1024AL-45QA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 LOW POWER CMOS STATIC RAM
中文描述: 128K X 8 STANDARD SRAM, 45 ns, PDSO32
封裝: 0.450 INCH, PLASTIC, SOP-32
文件頁數(shù): 3/11頁
文件大?。?/td> 75K
代理商: IS65C1024AL-45QA3
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
01/24/05
3
ISSI
IS62C1024AL
IS65C1024AL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +125
1.0
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Options
Min.
Max.
Unit
V
OH
V
OL
V
IH
V
IL
I
LI
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 2.1 mA
2.4
2.2
-0.5
-1
-2
-5
-1
-2
-5
0.4
V
V
V
V
μA
V
DD
+ 0.5
0.8
1
2
5
1
2
5
GND
V
IN
V
DD
Com.
Ind.
Auto.
Com.
Ind.
Auto.
I
LO
Output Leakage
GND
V
OUT
V
DD
CE1
=
V
IH
, or
CE2 =
V
IL
, or
OE
=
V
IH
or
WE
=
V
IL
μA
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IS65C1024AL-45TA3 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW POWER CMOS STATIC RAM
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