參數(shù)資料
型號: IS655A
英文描述: PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | LED-2B
中文描述: 光電晶體管|叩| 800NM峰值波長|發(fā)光二極管- 2B衛(wèi)星
文件頁數(shù): 2/3頁
文件大?。?/td> 39K
代理商: IS655A
DB92102-AAS/A2
7/12/00
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
IS654A
Emitter
Forward Voltage (V
F
)
Reverse Current (I
R
)
Radiant Flux (I
)
Peak Emission Wavelength
Spectrum Radiation Bandwidth
Beam Emission Angle
1.2
1.6
100
V
μ
A
mW/sr
nm
nm
deg.
I
F
= 20mA
V
= 5V
I
F
= 40mA
I
F
= 40mA
I
F
= 40mA
1.5
940
50
±20
IS655A
Detector
Collector-emitter Breakdown (BV
)
30
V
I
= 1mA
Ee = 0mW/cm
2
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
5
V
I
= 100
μ
A
Ee = 0mW/cm
2
Collector-emitter Dark Current (I
CEO
)
100
nA
V
= 10V
Ee = 0mW/cm
2
On-State Collector Current I
C
(
ON
)
1
mA
5V V
Ee = 1mW/cm
2
Collector-emitter Saturation Voltage V
CE(SAT)
0.4
V
I
= 0.5mA
Ee = 0.5mW/cm
2
Rise Time
Fall Time
tr
tf
10
8
40
35
μ
s
μ
s
V
CC
= 20V, I
C
= 1mA,
R
L
= 1k
Peak Sensitivity Wavelength
Beam Acceptance Angle
940
±20
nm
deg.
I
F
= 40mA
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
Note 1
Special Selections are available on request. Please consult the factory.
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