- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377558 > IS64VF12836A-7.5TQA3 (INTEGRATED SILICON SOLUTION INC) 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS64VF12836A-7.5TQA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| 中文描述： | 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 13/25頁 |
| 文件大小： | 173K |
| 代理商： | IS64VF12836A-7.5TQA3 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
13
ISSI
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5
MAX
x18
7.5
MAX
Symbol
Parameter
Test Conditions
Temp. range
x32/x36
x18
x32/x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
≤
V
IL
,
All Inputs
≤
0.2V or
≥
V
DD
– 0.2V,
Cycle Time
≥
t
KC
min.
Device Deselected,
V
DD
= Max.,
All Inputs
≤
V
IL
or
≥
V
IH
,
ZZ
≤
V
IL
, f = Max.
Com.
Ind.
A
UTO
.
typ.
(2)
175
180
190
175
180
190
155
160
175
155
160
175
mA
120
110
I
SB
Standby Current
TTL Input
Com.
Ind.
Auto.
90
100
120
90
100
120
90
100
120
90
100
120
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V
f = 0
Com.
Ind.
Auto.
typ.
70
75
90
70
75
90
70
75
90
70
75
90
mA
40
40
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
Auto.
typ.
30
35
45
30
35
45
30
35
45
30
35
45
mA
25
25
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100 μA maximum leakage current when tied to
≤
V
SS
+ 0.2V or
≥
V
DD
– 0.2V.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS64VF25618A | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25636A | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25636A-6.5B2 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25636A-6.5B2I | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS61LF25636A-6.5B3 | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64VF25618A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS64VF25618A-7.5TQA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
| IS64VPS12832A-200TQA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS64VPS12836A | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
| IS64VPS12836A-200TQA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。