參數(shù)資料
型號(hào): IS64LF25618A-7.5TQA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
中文描述: 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 13/25頁(yè)
文件大?。?/td> 173K
代理商: IS64LF25618A-7.5TQA3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
13
ISSI
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
6.5
MAX
x18
7.5
MAX
Symbol
Parameter
Test Conditions
Temp. range
x32/x36
x18
x32/x36
Uni
t
I
CC
AC Operating
Supply Current
Device Selected,
OE
= V
IH
, ZZ
V
IL
,
All Inputs
0.2V or
V
DD
– 0.2V,
Cycle Time
t
KC
min.
Device Deselected,
V
DD
= Max.,
All Inputs
V
IL
or
V
IH
,
ZZ
V
IL
, f = Max.
Com.
Ind.
A
UTO
.
typ.
(2)
175
180
190
175
180
190
155
160
175
155
160
175
mA
120
110
I
SB
Standby Current
TTL Input
Com.
Ind.
Auto.
90
100
120
90
100
120
90
100
120
90
100
120
mA
I
SBI
Standby Current
CMOS Input
Device Deselected,
V
DD
= Max.,
V
IN
V
SS
+ 0.2V or
V
DD
– 0.2V
f = 0
Com.
Ind.
Auto.
typ.
70
75
90
70
75
90
70
75
90
70
75
90
mA
40
40
I
SB
2
Sleep Mode
ZZ>V
IH
Com.
Ind.
Auto.
typ.
30
35
45
30
35
45
30
35
45
30
35
45
mA
25
25
Note:
1. MODE pin has an internal pullup and should be tied to V
DD
or V
SS
. It exhibits ±100 μA maximum leakage current when tied to
V
SS
+ 0.2V or
V
DD
– 0.2V.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
相關(guān)PDF資料
PDF描述
IS64VF12832A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12832A-7.5TQLA3 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12836A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF12836A-7.5TQA3 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
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參數(shù)描述
is64lf25636a 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS64LF25636A-7.5B3LA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9M (256Kx36) 7.5ns Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LF25636A-7.5B3LA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9M (256Kx36) 7.5ns Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LF25636A-7.5TQLA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9M (256Kx36) 166MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LF25636A-7.5TQLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9M (256Kx36) 166MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray