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參數(shù)資料
| 型號： | IS63LV1024L-8T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| 中文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | PLASTIC, TSOP2-32 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | IS63LV1024L-8T |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
5
IS63LV1024L
ISSI
AC TEST LOADS
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
-10 ns
-12 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
(2)
t
HZCE
(2)
t
PU
t
PD
Parameter
Min.
Max.
Min.
Max.
Max.
Unit
Read Cycle Time
8
—
10
—
12
—
ns
Address Access Time
—
8
—
10
—
12
ns
Output Hold Time
2
—
2
—
2
—
ns
CE
Access Time
—
8
—
10
—
12
ns
OE
Access Time
—
4
—
5
—
6
ns
OE
to Low-Z Output
0
—
0
—
0
—
ns
OE
to High-Z Output
0
4
0
5
0
6
ns
CE
to Low-Z Output
3
—
3
—
3
—
ns
CE
to High-Z Output
0
4
0
5
0
6
ns
CE
to Power Up Time
0
—
0
—
0
—
ns
CE
to Power Down Time
—
8
—
10
—
12
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and C1
output loading specified in Figure 1.
2. Tested with the C2 load in Figure 1. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Figure 1
OUTPUT
V
T
= 1.5V
Z
OUT
= 50
50
317
5 pF
Including
jig and
scope
351
OUTPUT
3.3V
Figure 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS63LV1024L-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63WV1024BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS63WV1024BLL-12BLI | 功能描述:靜態(tài)隨機存取存儲器 1M (128Kx8) 12ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63WV1024BLL-12BLI-TR | 功能描述:靜態(tài)隨機存取存儲器 1M (128Kx8) 12ns Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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