- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377573 > IS63LV1024L-12J (INTEGRATED SILICON SOLUTION INC) 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT PDF資料下載
參數(shù)資料
| 型號： | IS63LV1024L-12J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| 中文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | IS63LV1024L-12J |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
IS63LV1024L
ISSI
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
-10 ns
Min.
-12 ns
Min.
Symbol Parameter
Test Conditions
Min.
Max.
Max.
Max.
Unit
I
CC
1
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
—
—
100
110
—
—
95
105
—
—
90
100
mA
I
SB
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = Max
Com.
Ind.
—
—
35
40
—
—
30
35
—
—
25
30
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
—
—
15
20
—
—
15
20
—
—
15
20
mA
I
SB
2
CMOS Standby
Current
V
CC
= Max.,
CE
≤
V
CC
– 0.2V,
Com.
Ind.
—
—
1
—
—
1
—
—
1
mA
1.5
1.5
1.5
(CMOS Inputs)
V
IN
≥
V
CC
– 0.2V, or
V
IN
≤
0.2V, f = 0
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS63LV1024L-12JI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-12K | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-12KI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-12T | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-12TI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS63LV1024L-12JI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin SOJ |
| IS63LV1024L-12JL | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024L-12JL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024L-12J-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb 128Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024L-12K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。