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參數(shù)資料
| 型號(hào)： | IS62WV51216ALL-70TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 512K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | IS62WV51216ALL-70TI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
02/24/05
IS62WV51216ALL, IS62WV51216BLL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
°C
V
°C
W
–0.2 to V
DD
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV51216ALL-70XI | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL-45B | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL-55BI | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL-55BLI | 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV51216ALL-70TI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb, Low Power/Power Saver,Async,512K x 16,70ns,1.65v~2.2v,44 Pin TSOP II RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV51216ALL-70XI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL-45B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV51216BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8Mb 512Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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