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| 型號： | IS62WV25616BLL-55TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 55 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 115K |
| 代理商： | IS62WV25616BLL-55TI |
IS62WV25616ALL, IS62WV25616BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
IS62WV25616BLL
2.5V-3.6V
2.5V-3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
V
TERM
Terminal Voltage with Respect to GND
V
DD
V
DD
Related to GND
T
STG
Storage Temperature
P
T
Power Dissipation
Value
Unit
V
V
°C
W
–0.2 to V
DD
+0.3
–0.2 to V
DD
+0.3
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TRUTH TABLE
I/O PIN
Mode
WE
CS1
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
V
DD
Current
Not Selected
X
X
H
X
X
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
I
SB
1
, I
SB
2
I
SB
1
, I
SB
2
Output Disabled
H
H
L
L
H
H
L
X
X
L
High-Z
High-Z
High-Z
High-Z
I
CC
I
CC
Read
H
H
H
L
L
L
L
L
L
L
H
L
H
L
L
D
OUT
High-Z
D
OUT
High-Z
D
OUT
D
OUT
I
CC
Write
L
L
L
L
L
L
X
X
X
L
H
L
H
L
L
D
IN
High-Z
D
IN
D
IN
I
CC
High-Z
D
IN
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV25616BLL-55TI-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb 256Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616BLL-55TLI | 功能描述:靜態(tài)隨機存取存儲器 4Mb 256Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616BLL-55TLI-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb 256Kx16 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV25616BLL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616CLL-70BI | 制造商:Integrated Silicon Solution Inc 功能描述: |
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