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參數(shù)資料
| 型號(hào)： | IS62WV25616ALL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K × 16低電壓，超低功耗的CMOS靜態(tài)隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 14/14頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | IS62WV25616ALL |
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PACKAGING INFORMATION
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
06/18/03
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Plastic TSOP
Package Code: T (Type II)
D
SEATING PLANE
b
e
C
1
N/2
N/2+1
N
E1
A1
A
E
L
α
ZD
.
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
Plastic TSOP (T - Type II)
Millimeters
Min
Max
Millimeters
Min
Inches
Min
Inches
Min
Millimeters
Min
Inches
Min
Symbol
Ref. Std.
No. Leads (N)
A
A1
b
C
D
E1
E
e
L
ZD 0.95 REF 0.037 REF 0.81 REF 0.032 REF 0.88 REF 0.035 REF
α
0°
5°
0°
5°
0°
Max
Max
Max
Max
Max
32
44
50
—
0.05
0.30
0.12
20.82 21.08
10.03 10.29
11.56 11.96
1.27 BSC
0.40
1.20
0.15
0.52
0.21
—
0.002
0.012
0.005
0.820
0.391
0.451
0.050 BSC
0.016
0.047
0.006
0.020
0.008
0.830
0.400
0.466
—
0.05
0.30
0.12
18.31
10.03
11.56
0.80 BSC
0.41
1.20
0.15
0.45
0.21
18.52
10.29
11.96
—
0.002 0.006
0.012 0.018
0.005 0.008
0.721 0.729
0.395 0.405
0.455 0.471
0.032 BSC
0.016 0.024
0.047
—
0.05
0.30
0.12
20.82 21.08
10.03 10.29
11.56 11.96
0.80 BSC
0.40
1.20
0.15
0.45
0.21
—
0.002 0.006
0.012 0.018
0.005 0.008
0.820 0.830
0.395 0.405
0.455 0.471
0.031 BSC
0.016 0.024
0.047
0.60
0.024
0.60
0.60
5°
0°
5°
0°
5°
0°
5°
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV25616ALL-70BI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70T | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV25616ALL-70BI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV25616ALL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616ALL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS62WV25616BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 256Kx16 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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