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參數(shù)資料
| 型號(hào)： | IS62WV20488ALL-35TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| 中文描述： | 2M X 8 STANDARD SRAM, 35 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 120K |
| 代理商： | IS62WV20488ALL-35TI |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/21/06
3
ISSI
IS62WV20488ALL
IS62WV20488BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Terminal Voltage with Respect to GND
V
DD
Relates to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.5 to V
DD
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
TRUTH TABLE
Mode
WE
CS1
CS2
OE
I/O Operation
V
DD
Current
Not Selected
(Power-down)
Output Disabled H
Read
Write
X
X
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
High-Z
I
SB
1
, I
SB
2
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
H
L
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
相關(guān)PDF資料 |
PDF描述 |
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| IS62WV20488BLL | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25TLI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV20488BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25MLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (2Mx8) 25ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV20488BLL-25TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
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