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| 型號(hào)： | IS62WV1288BLL-55TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 55 ns, PDSO32 |
| 封裝： | LEAD FREE, PLASTIC, TSOP1-32 |
| 文件頁(yè)數(shù)： | 5/15頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | IS62WV1288BLL-55TLI |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
06/20/05
5
IS62WV1288ALL, IS62WV1288BLL
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288ALL
(1.65V - 2.2V)
Symbol
Parameter
Test Conditions
Max.
70 ns
8
8
5
5
5
0.8
0.8
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
typ.
(2)
10
10
5
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=1.8V, T
A
=25
o
C. Not 100% tested.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV1288BLL
(2.5V - 3.6V)
Symbol
Parameter
Test Conditions
Max.
45ns
17
17
12
5
5
0.8
0.8
Max.
55 ns
15
15
10
5
5
0.8
0.8
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
typ.
(2)
10
10
5
10
10
5
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.0V, T
A
=25
o
C. Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV20488ALL | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488ALL-35MI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488ALL-35TI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
| IS62WV20488BLL-25MI | 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV1288BLL-55TLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV1288DALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV1288DALL-55HLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV1288DBLL45HLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 45ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV1288DBLL-45HLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M (128Kx8) 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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