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參數(shù)資料
| 型號(hào)： | IS62U6416LL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K的× 16低電壓，超低功耗的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 93K |
| 代理商： | IS62U6416LL |
IS62U6416LL
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
SR034-0C
12/09/98
7
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-200
Symbol
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWB
t
PWE
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Parameter
Min.
Max.
Unit
Write Cycle Time
200
—
ns
CE
to Write End
160
—
ns
Address Setup Time to Write End
160
—
ns
Address Hold from Write End
0
—
ns
Address Setup Time
0
—
ns
LB
,
UB
Valid to End of Write
160
—
ns
WE
Pulse Width
160
—
ns
Data Setup to Write End
160
—
ns
Data Hold from Write End
0
—
ns
WE
LOW to High-Z Output
—
50
ns
WE
HIGH to Low-Z Output
20
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V,
input pulse levels of 0.4V to 1.8V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All
signals must be in valid states to initiate a Write, but any one can go inactive to terminate the
Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the
signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured
±
500 mV from steady-state voltage.
DATA RETENTION CHARACTERISTICS
Symbol
V
DR
I
DR
Parameter
Vcc for Data Retention
Data Retention Current
Test Condition
CE
≥
V
CC
– 0.2V
V
CC
= V
DR
CE
≥
V
CC
– 0.2V
See Data Retention Waveform
See Data Retention Waveform
Min.
1.5
—
Max.
—
5.0
Unit
V
μ
A
t
SDR
t
RDR
Data Retention Set up Time
Recovery Time
0
—
—
ns
ns
t
RC
DATA RETENTION TIMING DIAGRAM
CE
≥
V
CC
– 0.2V
V
CC
1.8V
V
IH
t
SDR
t
RDR
V
DR
CE
GND
DATA RETENTION MODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62U6416LL-20B | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20BI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20K | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62U6416LL-20B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
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